mct270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 document number 83724 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179004 i179004 1 2 3 6 5 4 b c e a c nc pb p b -free e3 optocoupler, phototransistor output, with base connection features ? interfaces with common logic families input-output coupling capacitance < 0.5 pf industry standard dual-in line 6-pin package 5300 v rms isolation test voltage lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 csa 93751 bsi iec60950 iec60065 applications ac mains detection reed relay driving switch mode power supply feedback telephone ring detection logic ground isolation logic coupling with high frequency noise rejection for additional design information see application note 45 description the mct27x family is an industry standard single channel phototransistor c ouplers. it includes the mct270/ 271/ 272/ 273/ 274/ 275/ 276/ 277 couplers. each optocoupler consists of gallium arsenide infra- red led and a silicon npn phototransistor. these couplers are underwriters laboratories (ul) listed to comply with a 5300 v rms isolation test volt- age. this isolation performance is accomplished through vishay double molding isolation manufacturing pro- cess. compliance to din en 60747-5-2(vde0884)/ din en 60747-5-5 pending partial discharge isolation specification is available by ordering option 1. these isolation processes and the vishay iso9001 quality program results in the highest isolation perfor- mance available for a commercial plastic phototrans- istor optocoupler. the devices are available also in lead formed config- uration suitable for surface mounting and are avail- able either on tape and reel, or in standard tube shipping containers. order information for additional information on t he available options refer to option information. part remarks mct270 ctr > 50 %, dip-6 mct271 ctr 45 - 90 %, dip-6 mct272 ctr 75 - 150 %, dip-6 mct273 ctr 125 - 250 %, dip-6 mct274 ctr 225 - 400 %, dip-6 mct275 ctr 70 - 210 %, dip-6 mct276 ctr 15 - 60 %, dip-6 mct277 ctr > 100 %, dip-6 MCT270-X009 ctr > 50 %, smd-6 (option 9) mct277-x009 ctr > 100 %, smd-6 (option 9)
www.vishay.com 2 document number 83724 rev. 1.5, 26-oct-04 mct270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v forward current i f 60 ma surge current t < 10 si fsm 2.5 a power dissipation p diss 100 mw parameter test condition symbol value unit collector-emitter breakdown voltage v ceo 70 v emitter-base breakdown voltage 7.0 v collector current i c 50 ma t < 1.0 ms i c 100 ma power dissipation p diss 150 mw parameter test condition symbol value unit isolation test voltage v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde0303,part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature t amb - 55 to + 150 c operating temperature t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature max. 10 s dip soldering: distance to seating plane 1.5mm t sld 260 c
mct270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 document number 83724 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 20 ma v f 1.5 v reverse current v r = 3.0 v i r 10 a capacitance v r = 0, f = 1.0 mhz c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 10 a, i f = 0 ma bv ceo 30 v emitter-collector breakdown voltage i e = 10 a, i f = 0 ma bv eco 7.0 v collector-base breakdown voltage i c = 10 a, i f = 0 ma bv cbo 70 v collector-emitter leakage current v ce = 10 v, i f = 0 ma i ceo 50 na parameter test condition symbol min ty p. max unit resistance, input to output v io = 500 vdc r io 10 12 ? capacitance (input-output) c io 0.5 pf collector-emitter saturation voltage i ce = 2.0 ma, i f = 16 ma v cesat 0.4 v parameter test condition part symbol min ty p. max unit dc current transfer ratio v ce = 10 v, i f = 10 ma mct270 ctr dc 50 % mct271 ctr dc 45 90 % mct272 ctr dc 75 150 % mct273 ctr dc 125 250 % mct274 ctr dc 225 400 % mct275 ctr dc 70 210 % mct276 ctr dc 15 60 % mct277 ctr dc 100 % current transfer ratio (collector-emitter) v ce = 0.4 v, i f = 16 ma mct271 ctr ce 12.5 % mct272 ctr ce 12.5 % mct273 ctr ce 12.5 % mct274 ctr ce 12.5 % mct275 ctr ce 12.5 % mct276 ctr ce 12.5 % mct277 ctr ce 40 %
www.vishay.com 4 document number 83724 rev. 1.5, 26-oct-04 mct270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 vishay semiconductors switching characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter te s t c o n d i t i o n part symbol min ty p. max unit switching time i c = 2.0 ma, r l = 100 ? , v ce = 5.0 v mct270 t on , t off 10 s mct271 t on , t off 7.0 s mct272 t on , t off 10 s mct273 t on , t off 20 s mct274 t on , t off 25 s mct275 t on , t off 15 s mct277 t on , t off 15 s mct276 t on , t off 3.5 s figure 1. forward voltage vs. forward current figure 2. normalized non-satura ted and saturated ctr vs. led current i4n25_01 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current - ma v f - forward voltage - v t a =C55c t a =25c t a =85c i4n25_02 normalized to: 0.0 0.5 1.0 1.5 0 1 10 100 i f - led current - ma nctr nctr(sat) nctr - normlized ctr ctrce(sat) vce=0.4 v vce=10 v, i f =10 ma, t a =25c t a =25c figure 3. normalized non-saturated and saturated ctr vs. led current figure 4. normalized non-saturated and saturated ctr vs. led current i4n25_03 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr - normalized ctr normalized to: ctrce(sat) vce=0.4 v vce=10 v, i f =10 ma, t a =25c nctr nctr(sat) t a =50c i4n25_04 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr - normalized ctr normalized to: ctrce(sat) vce=0.4 v vce=10 v, i f =10 ma, t a =25c nctr nctr(sat) t a =70c
mct270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 document number 83724 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 5. normalized non-saturated and saturated ctr vs. led current figure 6. collector-emitter cu rrent vs. temperature and led current figure 7. collector-emitter leakage current vs.temp. i4n25_05 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr - normalized ctr normalized to: ctrce(sat) vce = 0.4 v vce=10 v, i f =10 ma, t a =25c nctr nctr(sat) t a =85c i4n25_06 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50c 70c 85c i f - led current - ma ice - collector current - ma 25c i4n25_07 100 80 60 40 20 0 C20 10 10 10 10 10 10 10 10 C2 C1 0 1 2 3 4 5 t a - ambient temperature - c iceo - collector-emitter - na typical v ce =10v figure 8. normalized ctrcb vs. led current and temp. figure 9. normalized photocurrent vs. i f and temp. figure 10. normalized non-saturated hfe vs. base current and temperature i4n25_08 normalized to: 0.0 0.5 1.0 1.5 25c 50c 70c i f - led current - ma nctrcb - normalized ctrcb .1 1 10 100 vcb=9.3 v, i f =10 ma, t a =25 c i4n25_09 0. normalized to: 0.01 1 1 10 i f - led current - ma normalized photocurrent .1 1 10 100 i f =10 ma, t a =25c nib, t a =C20c nib, t a =25c nib, t a =50c nib, t a =70c i4n25_10 0.4 0.6 1.0 1.2 normalized to: ib - base current - a 1101001000 ib=20 a, vce=10 v, t a =25c 25c 70c C20c nhfe - normalized hfe 0.8
www.vishay.com 6 document number 83724 rev. 1.5, 26-oct-04 mct270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 vishay semiconductors figure 11. normalized hfe vs. base current and temp. figure 12. propagation delay vs. collector load resistor figure 13. switching timing i4n25_11 0.0 0.5 1.0 1.5 25c C20c 50c 70c nhfe(sat) - normalized saturated hfe 1 10 100 1000 vce=10 v, ib=20 a t a =25 c vce=0.4 v ib - base current - a normalized to: i4n25_12 1 10 100 1000 rl - collector load resistor - k ? t plh - propagation delay - s 2.5 2.0 1.5 1.0 .1 1 10 100 i f =10 ma,t a =25c v cc =5.0 v, vth=1.5 v t plh t phl t phl - propagation delay - s i4n25_13 i f t r =1.5 v v o t d t s t f t phl t plh v th figure 14. switching schematic i4n25_14 v cc =5.0v f=10 khz, df=50% r l v o i f =1 0 ma
mct270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 document number 83724 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a .343 (8.71) .335 (8.51) .256 (6.50) .248 (6.30) pin one i.d. .039 (0.99) min. .150 (3.81) .130 (3.30) .100 (2.54) .052 (1.33) .048 (1.22) 4 .040 (1.016) .020 (0.508) .0098 (.25) .0040 (.10) .012 (0.31) .008 (0.20) .300 (7.62) .395 (10.03) .375 (9.63) 3 to 7 18 min. .315 (8.00) typ. .050 (1.27) typ. smd iso method a i178002 .100 (2.54) r .010 (.25) .070 (1.78) .030 (.76) .060 (1.52) .315 (8.00) min .435 (11.05)
www.vishay.com 8 document number 83724 rev. 1.5, 26-oct-04 mct270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 vishay semiconductors min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. 18449 option 9
mct270/ 1/ 2/ 3/ 4/ 5/ 6/ 7 document number 83724 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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